RESONATEUR DISPERSIF NON PLANAIRE AVEC RESEAU DE DIFFRACTIONVORONTSOV VI; PARKHOMENKO YU N.1980; UKR. FIZ. Z. (KIEV, 1967); ISSN 0503-1265; UKR; DA. 1980; VOL. 25; NO 8; PP. 1251-1256; ABS. ENG; BIBL. 7 REF.Article

PROPRIETES DE SELECTION DES RESONATEURS DISPERSIFS COMPRENANT DES RESEAUXVORONTSOV VI; PARKHOMENKO YU N.1980; UKR. FIZ. Z. (KIEV, 1967); UKR; DA. 1980; VOL. 25; NO 7; PP. 1169-1175; ABS. ENG; BIBL. 7 REF.Article

DIFFRACTION DE LA LUMIERE PAR UNE SURFACE A ARETES AVEC HETEROGENEITES ALEATOIRESVORONTSOV VI; PARKHOMENKO YU N; SHPAK IV et al.1978; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1978; VOL. 23; NO 5; PP. 748-755; ABS. ANGL.; BIBL. 8 REF.Article

TRANSFORMATIONS STRUCTURALES SUR UNE FACE DE CLIVAGE (111) DU GERMANIUMGALAEV AA; GAMOSOV LV; PARKHOMENKO YU N et al.1979; KRISTALLOGRAFIJA; SUN; DA. 1979; VOL. 24; NO 1; PP. 130-133; H.T. 1; BIBL. 11 REF.Article

DIFFRACTION OPTIQUE PAR DES RESEAUX RECTANGULAIRES DE REFLEXION AVEC UNE CONDUCTIVITE FINIEVORONTSOV VI; KRAVCHENKO VI; PARKHOMENKO YU N et al.1977; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1977; VOL. 22; NO 7; PP. 1176-1183; ABS. ANGL.; BIBL. 9 REF.Article

ETUDE DE LA FACE (110) DU CRISTAL D'ANTIMONIURE D'INDIUM PAR LA METHODE DE DIFFRACTION DES ELECTRONS LENTSGALAEV AA; GORELIK SS; PARKHOMENKO YU N et al.1974; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1974; VOL. 217; NO 6; PP. 1300-1301; H.T. 2; BIBL. 3 REF.Article

Synthesis of the spectrum in ring lasers with coupling of counterpropagating waves in a spectral filter and the filtering by real spectral linesPARKHOMENKO, Yu N; ANDRIENKO, V. B.Quantum electronics (Woodbury). 2001, Vol 31, Num 3, pp 231-235, issn 1063-7818Article

Influence of spatial mode structure on the spectrum evolution in tunable lasersPARKHOMENKO, Yu N; ANISIMOVA, O. V.Quantum electronics (Woodbury). 2001, Vol 31, Num 8, pp 727-732, issn 1063-7818Article

Propriétés sélectives des résonateurs annulaires dispersifsKRAVCHENKO, V. I; PARKHOMENKO, YU. N; SOKOLOV, V. A et al.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1987, Vol 30, Num 12, pp 1477-1483, issn 0021-3462Article

Bulk Nanostructured Polycrystalline p-Bi-Sb-Te Thermoelectrics Obtained by Mechanical Activation Method with Hot PressingBULAT, L. P; BUBLIK, V. T; DRABKIN, I. A et al.Journal of electronic materials. 2010, Vol 39, Num 9, pp 1650-1653, issn 0361-5235, 4 p.Conference Paper

Etude d'une surface clivée de silicium par les méthodes d'hyperfréquences et réflexion optiqueBELOKONOV, A. N; GALAEV, A. A; MILYAEV, V. A et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 2, issn 0015-3222, 348Article

Structure-sensitive features of the valence band for disorder in siliconARTEM'EV, A. V; GALAEV, A. A; MIL'VIDSKII, A. M et al.Crystallography reports. 1993, Vol 38, Num 3, pp 385-387, issn 1063-7745Article

Nonmonotonic change in the structural grain size of the Bi0.4Sb1.6Te3 thermoelectric material synthesised by spark plasma sinteringOSVENSKIY, V. B; PANCHENKO, V. P; PARKHOMENKO, Yu. N et al.Journal of alloys and compounds. 2014, Vol 586, issn 0925-8388, S413-S418, SUP1Conference Paper

Investigation of the ferroelectric properties and dynamics of nanodomains in LiNbO3 thin films grown on Si (100) substrate by scanning probe microscopy techniquesKISELEV, D. A; ZHUKOV, R. N; KSENICH, S. V et al.Thin solid films. 2014, Vol 556, pp 142-145, issn 0040-6090, 4 p.Article

The strain distribution in Si lattice of the layer containing β-FeSi2 precipitatesBORUN, A. F; KHMELNITSKAJA, N. P; PARKHOMENKO, Yu. N et al.SPIE proceedings series. 2004, pp 242-250, isbn 0-8194-5324-2, 9 p.Conference Paper

Piezoelectric properties and surface potential behavior in LiNbO3 thin films grown by the radio frequency magnetron sputteringZHUKOV, R. N; BYKOV, A. S; KISELEV, D. A et al.Journal of alloys and compounds. 2014, Vol 586, issn 0925-8388, S336-S338, SUP1Conference Paper

Structure and Transport Properties of Bulk Nanothermoelectrics Based on BixSb2―xTe3 Fabricated by SPS MethodBULAT, L. P; DRABKIN, I. A; BUBLIK, V. T et al.Journal of electronic materials. 2013, Vol 42, Num 7, pp 2110-2113, issn 0361-5235, 4 p.Conference Paper